PN结的仿真silvaco

go athena
line x loc=0 spacing=1
line x loc=20 spacing=1
line y loc=0 spacing=0.005
line y loc=0.5 spacing=0.0125
init two.d silicon c.boron=1e15

deposit oxide thickness=0.005 div=2
etch oxide start x=4 y=-0.01
etch continue x=4 y=0
etch continue x=16 y=0
etch done x=16 y=-0.01
implant phosph dose=1e14 energy=50
deposit material=3C-SiC thickness=0.01 div=2
deposit alum thickness=0.02 div=5
etch alum x=4 right
electrode x=1    name=anode
structure flip.y
deposit alum thickness=0.1 div=5
electrode x=0 name=cathode
structure flip.y

structure outfile=graphene_silicon.str 

go atlas
init infile=graphene_silicon.str
material material=3C-SiC \
         permitti=3.3 \
         eg300=0 \
	  NC300=3e10 \
	  NV300=3e10 \
	  MUN=1e3 \
	  MUP=1e3 \
	  affinity=4.248 \
	  VSATURATION=3e7
structure outfile=graphene_silicon.str
tonyplot graphene_silicon.str
log outfile=graphene_silicon.log
solve vcathode=-3 vstep=0.3 vfinal=3 name=cathode
tonyplot graphene_silicon.log